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參數(shù)資料
| 型號(hào)： | FPAL15SM60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 運(yùn)動(dòng)控制電子 |
| 英文描述： | Smart Power Module (SPM) |
| 中文描述： | AC MOTOR CONTROLLER, 30 A, XMA30 |
| 文件頁(yè)數(shù)： | 3/17頁(yè) |
| 文件大小： | 355K |
| 代理商： | FPAL15SM60 |
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2002 Fairchild Semiconductor Corporation
F
Rev. C3, February 2002
Internal Equivalent Circuit and Input/Output Pins
Note
1. Inverter low-side ( (1) – (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving,
current sensing and protection functions.
2. Inverter power side ( (13) – (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side ( (18) – (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3.
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
N
P
Negative DC–Link Input
Positive DC–Link Input
Signal Input Terminal for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
High-side Common Supply Ground
Signal Input Terminal for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input Terminal for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
COM
(H)
IN
(VH)
V
CC(VH)
V
B(V)
V
S(V)
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
Pin Descriptions
(Continued)
Pin Number
Pin Name
Pin Description
W
V
U
N
(14)
(15)
(16)
(17)
P
(1) V
CC(L)
(2) COM
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
(7) C
FOD
(8) C
SC
(12) R
TH
(11) V
TH
(13)
THERMISTOR
(29) V
B(U)
(22) COM
(H)
(27) IN
(UH)
(30) V
S(U)
(28) V
CC(UH)
(25) V
B(V)
(23) IN
(VH)
(24) V
CC(VH)
(26) V
S(V)
(20) V
B(W)
(18) IN
(WH)
(19) V
CC(WH)
(21) V
S(W)
(10) NC
(9) R
SC
V
CC
Wout
Uout
Vout
C
(SC)
C
(FOD)
V
(FO)
IN
(WL)
IN
(VL)
IN
(UL)
COM
(L)
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
VB
HO
VS
Vcc
IN
COM
VB
HO
VS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FPAL20SL60 | 功能描述:IGBT 晶體管 600V/20A/SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FPAL20SM60 | 功能描述:IGBT 晶體管 600V/20A/SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FPAL30SL60 | 功能描述:IGBT 晶體管 600V/30A/SPM RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FPAL40 | 制造商:HENSEL 功能描述:WALL BRACKETS PK4 制造商:HENSEL 功能描述:WALL BRACKETS, PK4 |
| FP-ALC1 | 制造商:Radio Design Labs 功能描述:Mono Automatic Level Control |
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