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參數(shù)資料
| 型號(hào)： | FP1189-PCB900S |
| 英文描述： | 1/2 - Watt HFET |
| 中文描述： | 1 / 2 -瓦特異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 516K |
| 代理商： | FP1189-PCB900S |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
September 2004
FP1189
- Watt HFET
Product Information
Application Circuit: 1930 – 1990 MHz (FP1189-PCB1900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 125 mA, 25
°
C
Frequency
MHz
S21 – Gain
dB
S11 – Input Return Loss
dB
S22 – Output Return Loss
dB
Output P1dB
dBm
Output IP3
(+12 dBm / tone, 1 MHz spacing)
Noise Figure
dB
IS-95 Channel Power
@ -45 dBc ACPR
ICAP
DNP pF
C=
33 pF
C=
DNP pF
1930
15.8
-26
-9.2
+27.4
1960
15.7
-26
-9.6
+27.2
1990
15.5
-24
-9.0
+27.4
dBm
+40.4
3.7
dBm
+20.8
RES
R=
10 Ohm
R2
ICAP
C=
DNP pF
C13
IIND
L=
22 nH
L1
IRES
R=
100 Ohm
R1
CAP
C=
33 pF
C1
CAP
ID=
C=
DNP pF
C2
IND
L=
22 nH
L3
CAP
C=
33 pF
C6
CAP
C=
DNP pF
C7
CAP
C=
DNP pF
C8
ICAP
C=
DNP pF
C12
ICAP
C=
0.5 pF
C5
ICAP
C=
33 pF
C9
ICAP
C=
1.8 pF
C15
CAP
ID=
C=
DNP pF
C13
IIND
L=
2.7 nH
L2
ICAP
C=
1e5 pF
C11
C=
C3
ICAP
C4
CAP
ID=
C10
1
2
SID=
NET=
"FP1189"
Q1
P1
P=
50 Ohm
Z=
P2
P=
50 Ohm
Z=
-Vgg
Vds = 8 V @ 125 mA
14 mil GETEKTM ML200DSS (er = 4.2)
The main microstrip line has a line impedance of 50 O.
Bill of Materials
Value
33 pF
0.5 pF
0.1
μ
F
1.8 pF
22 nH
2.7 nH
100 O
10 O
FP1189
Ref. Desig.
C1, C4, C6, C9
C5
C11
C15
L1, L3
L2
R1
R2
Q1
C2, C3, C7, C8,
C10, C12, C13, C14
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 0.5W HFET
Size
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
Do Not Place
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