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參數(shù)資料
| 型號(hào)： | FOA1061A1 |
| 廠商： | SIEMENS A G |
| 元件分類： | 數(shù)字傳輸電路 |
| 英文描述： | 622Mbit/s Transimpedance Amplifier(622Mbit/s 互阻抗放大器) |
| 中文描述： | ATM/SONET/SDH SUPPORT CIRCUIT, PDSO16 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 139K |
| 代理商： | FOA1061A1 |
FOA1061A1
FOA1062A1
Semiconductor Group
7
July 1998
Application notes
a) General information
The output pins Q
+
and Q
-
must be terminated equally to prevent instabilities.
It is recommended to minimize stray capacitance when connecting photodiode to
transimpedance amplifier.
To improve power supply rejection ratio (PSRR), V
CC
should be supplied via resistor
(4.7
)
, capacitor (100 nF) to GND, and inductor (BLM11A601, Murata) to V
CC
-pin.
The monitor pin (not used in these application notes) must be left open or connected
to V
CC
via resistor of 0 … 2 k
.
b)
Figure 6 Application using PIN-photodiode.
c)
Figure 7 Application using APD-photodiode.
V
IN
G
FILTER
Q-
Q+
FOA1061/2
100 nF
4.7
VCC
GND
L*
PIN-
Diode
*) BLM11A601, Murata
22 nF
22 nF
Q+
Q-
V
IN
G
FILTER
Q-
Q+
FOA1061/2
22 nF
22 nF
100 nF
4.7
VCC
GND
L*
Q+
Q-
x nF
APD-Diode
*) BLM11A601, Murata
V
APD
x k
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