參數(shù)資料
型號： FMS7G20US60S
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Compact & Complex Module
中文描述： 20 A, 600 V, N-CHANNEL IGBT
封裝： 25PM-AA, 25 PIN
文件頁數(shù)： 7/10頁
文件大?。?/td> 781K
代理商： FMS7G20US60S
7
www.fairchildsemi.com
FMS7G20US60S Rev. B1
F
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
Figure 15. SOA Characteristics
Figure 16. RBSOA Characteristics
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Characteristics
0
10
20
30
40
50
60
0
3
6
9
12
15
300 V
200 V
V
C
C
= 100 V
Common Emitter
R
L
= 15
T
C
= 25
o
C
G
a
i
G
E
G
ate C
harge, Q
g
[nC
]
10
15
20
25
30
35
40
100
1000
10000
Common Emitter
V
GE
= ± 15V, R
G
= 10
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Eoff
Eon
Eoff
S
i
C
ollector C
urrent, I
C
[A
]
0
100
200
300
400
500
600
700
0.1
1
10
80
Single Nonrepetitive
Pulse T
J
≤
125
℃
V
GE
= 15V
R
G
= 10
C
Collector-Emitter Voltage, V
CE
[V]
0.3
1
10
100
1000
0.01
0.1
1
10
100
Single Nonrepetitive
Pulse T
C
= 25
℃
Curves must be derated
linearly with increase
in temperature
50us
100us
1 ms
DC Operation
I
C
MAX. (Continuous)
I
C
MAX. (Pulsed)
C
C
Collector-Emitter Voltage, V
CE
[V]
3
6
9
12
15
18
21
0.1
1
10
20
Common Cathode
di/dt = 40A/us
T
C
= 25
℃
T
C
= 100
℃
--------
I
rr
T
rr
P
R
Forward Current, I
F
[A]
0
1
2
3
4
0
5
10
15
20
25
30
35
40
Common Cathode
V
GE
= 0V
T
C
= 25
℃
T
C
= 125
℃
F
Forward Voltage, V
F
[V]
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