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Preliminary Data Sheet
2.1
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850-5790 Fax: +1 (408) 850-5766 Email:
sales@filcsi.com
Website: www.filtronic.com
FMS2016QFN-1
High Power Reflective GaAs SP4T Switch
Features:
3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High
reliability applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
Very high isolation: >29dB at 1.8GHz
Very low Insertion loss: 0.65dB at 1.8GHz
Very low control current
Functional Schematic
Description and Applications:
The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide
antenna switch designed for use in mobile handset applications. The die is fabricated using the
Filtronic FL05 0.5
μ
m switch process technology, which offers excellent performance optimised for
switch applications. The FMS2016QFN is designed for use in dual/tri and quad band GSM handset
antenna switch modules and RF front-end modules. It can also find use in other applications where
high power and linear RF switching is necessary.
Electrical Specifications:
(T
AMBIENT
= 25°C,V
ctrl
= 0V/2.5V, Z
IN
= Z
OUT
= 50
)
Parameter
Test Conditions
Min
Typ
Max
Units
Insertion Loss
0.5 – 1.0 GHz
1.0 – 2.0 GHz
<0.55
<0.65
dB
dB
Return Loss
0.5 – 2.5 GHz
20
dB
Isolation
RF1 – RF3 and RF2 – RF4
0.5 – 1.0 GHz
1.0 – 2.0 GHz
34
32
dB
dB
Isolation
RF1 – RF2
0.5 – 1.0 GHz
1.0 – 2.0 GHz
34
32
dB
dB
Isolation
RF3 – RF4
0.5 – 1.0 GHz
1.0 – 2.0 GHz
34
30
dB
dB
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
dBc
dBc
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle
2 GHz, Pin = +35 dBm, 100% Duty Cycle
-75
-75
dBc
dBc
Switching speed : Trise, Tfall
Ton, Toff
10% to 90% RF and 90% to 10% RF
50% control to 90% RF and 50% control to 10% RF
<0.3
1.0
μ
s
μ
s
Control Current
+35dBm RF input @1GHz
<10
μ
A
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
ANT
RF1
RF3
RF2
RF4