參數(shù)資料
型號(hào): FMS2013
英文描述: SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
中文描述: 單刀雙擲砷化鎵吸收開(kāi)關(guān),高隔離的DC - 4 GHz頻率范圍
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 197K
代理商: FMS2013
Preliminary Data Sheet
2.1
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email:
sales@filss.com
Website: www.filcs.com
FMS2013
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
P
in
+30dBm
Control Voltage
V
ctrl
+5V
Operating Temperature
T
OP
-40°C to +100°C
Storage Temperature
T
OP
-55°C to +150°C
Note:
Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
Note:
‘High’ = >2.5V & <5V
‘Low’ = <0.2V
Pad and Die Layout:
Note:
Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (
μ
m)
Die Thickness
(
μ
m)
Min. Bond Pad
Pitch (
μ
m)
Min. Bond pad
Opening (
μ
m)
870 x 970
150
141
94 x 94
V
ctrl1
V
ctrl2
RFIN-RF01
RFIN-RF02
High
Low
On
Off
Low
High
Off
On
Pad
Reference
Pad
Name
Description
Pin Coordinates
(
μ
m)
A
G1
GND1
159 , 286
B
RFI
RFIN
159 , 446
C
C2
Vctrl1
159 , 606
D
C1
Vctrl2
159 , 766
E
RFO1
RFO1
757 , 857
F
G2
GND2
757 , 555
G
G3
GND3
757 , 414
H
RFO2
RFO2
757 , 112
A
B
C
D
E
F
G
H
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