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參數(shù)資料
| 型號(hào)： | FMQT4292-WBFBP-08A |
| 廠商： | 江蘇長(zhǎng)電科技股份有限公司 |
| 英文描述： | TRANSISTOR |
| 中文描述： | 晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 224K |
| 代理商： | FMQT4292-WBFBP-08A |
WBFBP-08A
(4×4×0.5)
unit: mm
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-08A Plastic-Encapsulate Transistors
FMQT4292
TRANSISTOR
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
FEATURES
Complementary Pair
z
z
Tow A42-Type NPN, Tow A92-Type PNP
z
APPLICATION
IDEAL FOR LOW POWER AMPLIFICATION AND
SWITCHING
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: 4292
4292
A42 MAXIMUM RATINGS* T
A
=25
℃
unless otherwise noted
Symbol
Epitaxial Planar Die Construction
Parameter
Value
Units
V
CBO
Collector-Base Voltage
310
V
V
CEO
Collector-Emitter Voltage
305
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current -Continuous
500
mA
T
J
, T
stg
Junction and Storage Temperature
-55-150
℃
R
JA
Thermal Resistance, junction to Ambient
200
℃
/mW
℃
/mW
R
JC
A92 MAXIMUM RATINGS* T
A
=25
℃
unless otherwise noted
Symbol
Thermal Resistance, unction to Case
83.3
Parameter
Value
Units
V
CBO
Collector-Base Voltage
-300
V
V
CEO
Collector-Emitter Voltage
-300
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current -Continuous
-500
mA
T
J
, T
stg
Junction and Storage Temperature
-55-150
℃
R
JA
Thermal Resistance, junction to Ambient
200
℃
/mW
℃
/mW
R
JC
Thermal Resistance, unction to Case
83.3
1
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