
SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
*
625mW POWER DISSIPATION
*
I
C
CONT 3A
*
12A Peak Pulse Current
*
Excellent H
FE
Characteristics Up To 12A (pulsed)
*
Extremely Low Saturation Voltage E.g. 8mV Typ.
*
Extremely Low Equivalent On Resistance;
R
CE(sat)
DEVICE TYPE
COMPLEMENT
PARTMARKING
R
CE(sat)
50m
at 3A
50m
at 2A
75m
at 2A
FMMT617
FMMT717
617
FMMT618
FMMT718
618
FMMT619
FMMT720
619
FMMT624
FMMT723
624
-
FMMT625
625
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT
617
FMMT
618
FMMT
619
FMMT
624
FMMT
625
UNIT
Collector-Base Voltage
V
CBO
15
20
50
125
150
V
Collector-Emitter Voltage
V
CEO
15
20
50
125
150
V
Emitter-Base Voltage
V
EBO
5
5
5
5
5
V
Peak Pulse Current**
I
CM
12
6
6
3
3
A
Continuous Collector Current
I
C
3
2.5
2
1
1
A
Base Current
I
B
500
mA
Power Dissipation at T
amb
=25°C*
P
tot
625
mW
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +150
°C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
C
B
E
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
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