參數(shù)資料
型號(hào)： FMM5822VU
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： K-Band Power Amplifier MMIC
中文描述： K波段單片功率放大器
文件頁(yè)數(shù)： 1/16頁(yè)
文件大?。?/td> 227K
代理商： FMM5822VU
X-Band Power Amplifier MMIC
Edition 1.2
June 2005
1
ES/EMM5068VU
Device
の寫真
Preliminary
FEATURES
High Output Power: Pout=33.0dBm (typ.)
High Linear Gain: G
L
=26.0dB (typ.)
Broad Band: 9.5-13.3GHz
Impedance Matched Zin/Zout=50
Ω
Small Hermetic Metal-Ceramic SMT Package(VU)
DESCRIPTION
The EMM5068VU is a MMIC amplifier that contains a three-stages
amplifier, internally matched, for standard communications band in the
9.5 to 13.3GHz frequency range.
Eudyna Devices’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Channel Temperature
Storage Temperature
Symbol
V
DD
V
GG
P
in
T
ch
T
stg
Unit
V
V
dBm
o
C
o
C
RECOMMENDED OPERATING CONDITIONS
Item
Drain-Source Voltage
Drain-Source Current
Input Power
Operating Case Temperature
ELECTRICAL CHARACTERISTICS (Case Temperature Ta=25
o
C)
Symbol
V
DD
I
DD
P
in
Top
Unit
V
mA
dBm
o
C
Unit
Min.
9.5
31
*1
28
*2
22
*1
20
*2
-
Typ.
-
33
*1
30
*2
25
*1
23
*2
21
*1
13
*2
-40
*3
1700
*1
2400
*1
1500
*2
2400
*2
-8
-8
Max.
13.3
-
-
-
-
-
Frequency Range
Output Power at 1dB G.C.P.
f
V
DD
=6V
I
DD
=1300mA
Z
s
=Z
l
=50ohm
*1:f=9.5~11.7GHz
*2:f=11.7~13.3GHz
GHz
dBm
P
1dB
Power Gain at 1dB G.C.P.
G
1dB
dB
Power-added Efficiency at 1dB G.C.P.
η
add
%
-
-
-
Third Order Intermodulation*
Drain Current at 1dB G.C.P.
IM
3
I
DD
*3:
f=10MHz ,
2-Tone Test,
P
out
=20dBm S.C.L.
-37
*3
-
-
-
-
dBc
mA
mA
dB
dB
Input Return Loss (at Pin=-20dBm)
Output Return Loss (at Pin=-20dBm)
RL
in
RL
out
-
-
G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level
Class 0
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
CASE STYLE
VU
Rating
10
-3
26
+175
-55 to +125
6
1300
<=12
~ 199V
Conditions
Limits
Test Conditions
Item
Symbol
-40 to +85
相關(guān)PDF資料
PDF描述
FMMD2835 SOT23 SILICON PLANAR HIGH SPEED SWITCHING COMMON ANODE DIODE PAIR
FMMD2837 null
FMMD6050 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE
FMMD914 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE
FMMT2907 SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMM5822X 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:K-Band Power Amplifier MMIC
FMM5823X 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:K-Band Power Amplifier MMIC
FMM5826X 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:Ka-Band Power Amplifier MMIC
FMM5829X 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:K-Band Power Amplifier MMIC
FMM60-02TF 功能描述:MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 33V 33A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*