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參數(shù)資料
| 型號(hào)： | FMM5704X |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | 36-40GHz LNA MMIC |
| 中文描述： | 36 - 40GHz的單片低噪聲放大器 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 1252K |
| 代理商： | FMM5704X |
FMM5704X
36-40GHz LNA MMIC
Item
Symbol
Drain-Source Voltage
VDD
4
V
Input Power
Pin
-3
dBm
°
C
Storage Temperature
-65 to +175
Tstg
Operating Backside Temperature
°
C
Top
-45 to +125
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 3 volts.
2. This product should be hermetically packaged.
1
Edition 1.0
December 2000
Item
Symbol
Conditions (2)
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Input Return Loss
RLin
-
-
-10
dB
Output Power at 1dB G.C.P.
P1dB
-
-
9
dBm
Output Return Loss
RLout
-
-10
-
dB
Noise Figure
-
2.0
2.5
dB
NF
Associated Gain
15
18
20
dB
G
as
VDD = 3V
f = 40GHz
IDD
=
20mA (Typ.)
ZS = ZL = 50
Note 1:
RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1)
Note 2:
Electrical Characteristics specified with RF-probe measurement.
FEATURES
Low Noise Figure: NF = 2.0dB (Typ.) @ f=40 GHz
High Associated Gain: Gas= 18dB (Typ.) @ f=40 GHz
Wide Frequency Band: 36-40 GHz
High Output Power: 9dBm (Typ.) @ f=40 GHz
Impedance Matched Zin/Zout = 50
DESCRIPTION
The FMM5704X is a LNA MMIC designed for
applications in the 36-40 GHz frequency range.
This product is well suited for satellite communications,
radio link, and applications where low noise and high
dynamic range are required.
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