參數(shù)資料
型號: FMM5049VT
廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述: Power Amplifier MMIC
中文描述: 功率放大器單片
文件頁數(shù): 1/4頁
文件大小: 170K
代理商: FMM5049VT
Item
Drain-Source Voltage
Gate-Source Voltage
Storage Temperature
Symbol
VDD
VGG
Pin
Tstg
Top
+12
-7
-55 to +125
V
V
Input Power
+15
dBm
°
C
Operating Backside Temperature
-40 to +85
°
C
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the long term reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDD) should not exceed 10 volts.
2. The drain-source operating voltage (VGG) should not exceed -5 volts.
1
Edition 1.0
October 2001
Item
Symbol
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Linear Gain (Note 1)
30.0
33.0
-
-
dB
-
-
2500
mA
Output Power
39.0
41.0
-
dBm
P
out
G
L
-
70
-
mA
Drain Current
-
4000
mA
IDD
IGG
IDD(DC)
VDD1,2 = 10V
f = 2.2GHz
Pin = 12dBm
Without RF
Note 1
Pin
-6dBm
Gate Current
DC Input Current
DESCRIPTION
The FMM5049VT is a high-gain, wide band, three-stage MMIC
amplifier designed for PCS/PCN and W-CDMA applications as a driver
or output stage in the 1.8-2.3GHz band. The output stage is partially
matched for this device. This product is uniquely suited for use in
base station amplifiers as it offers high gain, long term reliability and
ease of use.
FEATURES
High Output Power: Pout= 41.0dBm (Typ.)
High Linear Gain: GL = 33.0dB (Typ.)
Broad Band: 1.8 to 2.3GHz
Hermetically Sealed Package
FMM5049VT
Power Amplifier MMIC
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMM5051VF 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:13.75-14.5GHz Power Amplifier MMIC
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FMM5054VF 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:Ku to V-Band, Power Amplifier MMIC, 13.75-14.5GHz, 33dBm, 1050mA, Bulk
FMM5056VF 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:C to Ka-Band, Power Amplifier MMIC, 5.8-7.2GHz, 34dBm, 1100mA, Bulk