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參數(shù)資料
| 型號： | FMJ-23L |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 10A Schottky barrier diode in TO220F package |
| 中文描述： | 10 A, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | FMJ-23L |
10A Schottky barrier diode in TO220F package
FMJ -23L
Parameter
Ratings
Unit
Conditions
10ms Half-cycle sinewave Single Shot
V
A
A
A
2
s
°
C
°
C
30
10
100
50
–40 to +150
–40 to +150
V
RM
I
F(AV)
I
FSM
I
2
t
Tj
Tstg
mA
mA
mA
°
C/W
Parameter
Ratings
Unit
Conditions
V
0.45max
5.0max
50max
250max
4.0max
V
F
I
F
=5.0A
V
R
=V
RM
Tj=125
°
C
,
V
R
=V
RM
Tj=150
°
C
,
V
R
=V
RM
J unction-to-case
I
R
H.I
R
1
H.I
R
2
Rth(j-c)
(Ta=25
°
C)
I
Absolute maximum ratings
I
Electrical characteristics
0
2
4
6
8
10
0
2
4
6
8
10
t/T
=
1/3, Sinewave
t/T
=
1/2
D.C.
t/T
=
1/6
F
F
(
Average forward current I
F(AV)
(A)
I
F(AV)
–P
F
Characteristic
T
t
Tj=150oC
t/T
=
1/3, Sinewave
t/T
=
1/2
D.C.
t/T
=
1/6
50
70
90
110
130
150
0
2
4
6
8
V
R
=0V
10
A
F
(
Case temperature T
C
(
°
C)
T
C
–I
F(AV)
Characteristic
T
t
Tj=150oC
Sinewave
1–t/T
=
5/6
1–t/T
=
2/3
1–t/T
=
1/2
0
5
10
15
25
20
30
0
5
10
15
R
R
(
Reverse voltage V
R
(V)
V
R
–P
R
Characteristic
T
t
Tj=150oC
Sinewave
D.C.
t/T
=
1/3
t/T
=
1/2
t/T
=
1/6
50
70
90
110
130
150
0
2
4
6
8
V
R
=30V
10
A
F
(
Case temperature T
C
(
°
C)
T
C
–I
F(AV)
Characteristic
T
t
Tj=150oC
3.3
0
3
1.35
10.0
4
4
0.85
2.54
2.54
4.2
2.8
C 0.5
2.4
1
1
±
0
0.45
+0.2
–0.1
0
0.1
0.2
0.4
0.3
0.6
0.5
0.001
1
0.1
0.01
10
100
F
F
(
Forward voltage V
F
(V)
V
F
–I
F
Characteristic (Typ.)
0
5
15
10
20
25
30
0.001
0.01
10
1
0.1
100
R
R
(
Reverse voltage V
R
(V)
V
R
–I
R
Characteristic (Typ.)
100
°
C
60
°
C
25
°
C
Ta=150
°
C
125
°
C
Ta=150
°
C
125
°
C
100
°
C
60
°
C
25
°
C
External dimensions
(Unit: mm)
Flammability:
UL94V-0 or equivalent
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