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參數(shù)資料
| 型號(hào)： | FMG2G75US60 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Molding Type Module |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 封裝： | 7PM-GA, 7 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 500K |
| 代理商： | FMG2G75US60 |
2004 Fairchild Semiconductor Corporation
FMG2G75US120 Rev. A
F
0
10
20
30
40
50
0
4
8
12
16
20
Eon
Eoff
G
ate R
esistance, R
G
[
]
S
i
J
Common Emitter
V
CC
= 600 V, V
GE
= ± 15 V
I
C
= 75 A
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
0
10
20
esistance, R
30
40
50
10
100
1000
Toff
Tf
S
i
e
G
ate R
G
[
]
Common Emitter
V
CC
= 600 V, V
GE
= ± 15 V
I
C
= 75 A
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
0
10
20
30
40
50
100
1000
Ton
Tr
Common Emitter
V
CC
= 600 V, V
GE
= ± 15 V
I
C
= 75 A
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
S
i
e
G
ate R
esistance, R
G
[
]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
20
40
60
80
100
120
140
160
Forward Voltage, V
F
[V]
F
Common Cathode
V
GE
= 0V
T
C
= 25
℃
T
C
= 125
℃
0
100
200
300
400
500
600
0
3
6
9
12
15
Gate Charge, Qg [ nC ]
G
Common Emitter
R
L
= 7.5
V
CE
= 600V
T
C
= 25
℃
Fig 8. Turn-on Characteristics vs.
Gate Resistance
Fig 11. Gate Charge Characteristics
Fig 12. Forward Characteristics(diode)
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
Eon
Eoff
S
i
J
C
ollector C
urrent, I
C
[A
]
Common Emitter
V
GE
= ± 15 V, R
G
= 10
T
C
= 25
℃ ℃℃
T
C
= 125
------
℃
Fig 7. Switching Loss vs. Collector Current
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