參數(shù)資料
型號(hào): FMG2G400US60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Molding Type Module
中文描述: 400 A, 600 V, N-CHANNEL IGBT
封裝: PLASTIC, 7PM-IA, 7 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 384K
代理商: FMG2G400US60
2004 Fairchild Semiconductor Corporation
FMG2G400LS60 Rev. A
IGBT
F
FMG2G400LS60
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction as
well as short circuit ruggedness. It’s designed for the
applications such as welder.
Features
Short Circuit Rated Time; 10us @ T
C
=100
°
C, V
GE
= 15V
Low Saturation Voltage : V
CE
(sat) = 1.4 V @ I
C
= 400A
High Input Impedance
Fast & Soft Anti-Parallel FWD
UL Certified No.E209204
Application
AC/ DC Welder
Internal Circuit Diagram
C1
E2
G1
E1
G2
E2
E1/C2
Package Code : 7PM-IA
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Symbol
Description
FMG2G400LS60
600
± 20
400
800
400
800
1136
10
-40 to +150
-40 to +125
2500
4.0
4.0
Units
V
V
A
A
A
A
W
us
°
C
°
C
V
N.m
N.m
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
SC
T
J
T
STG
V
ISO
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Short Circuit Withstand Time
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminal Screw : M6
Mounting Screw : M6
@ T
C
= 25
°
C
@ T
C
= 100
°
C
@ AC 1minute
Mounting Torque
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMG2G50US120 功能描述:IGBT 晶體管 1200V 50A IGBT Module RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FMG2G50US60 功能描述:IGBT 模塊 600V/50A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMG2G75US120 功能描述:IGBT 晶體管 1200V 75A IGBT Module RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FMG2G75US60 功能描述:IGBT 模塊 600V/75A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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