參數(shù)資料
型號(hào): FMBT3906
廠(chǎng)商: 美麗微半導(dǎo)體有限公司
英文描述: PNP EPITAXIAL PLANAR TRANSISTOR
中文描述: 進(jìn)步黨外延平面晶體管
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 36K
代理商: FMBT3906
Formosa MS
FORMOSA
MICROSEMI CO., LTD.
Spec. No. : FMSC001
Issued Date : 2002/12/13
Revised Date : 2002/12/25
Page No. : 2/3
FMBT3906
FORMOSA MS Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
1
10
100
1000
Collector Current-I
C
(mA)
h
hFE @ V
CE
=1V
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
10
100
1000
1
10
Collector Current-I
C
(mA)
100
1000
S
V
CE(sat)
@ I
C
=10I
B
25
o
C
75
o
C
125
o
C
Saturation Voltage & Collector Current
100
1000
10000
1
10
100
1000
Collector Current-I
C
(mA)
S
V
BE(sat)
@ I
C
=10I
B
25
o
C
75
o
C
125
o
C
Cutoff Frequency & Collector Current
10
100
1000
1
10
Collector Current (mA)
100
1000
C
fT @ V
CE
=20V
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
Reverse Biased Voltage (V)
C
Cob
Safe Operating Area
0.01
0.1
1
10
100
1000
10000
1
10
100
Forward Voltage (V)
C
PT=1ms
PT=100ms
PT =1s
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