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參數(shù)資料
| 型號： | FMB1020 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package |
| 中文描述： | 500 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 29K |
| 代理商： | FMB1020 |
V
0.85
1.0
Ic = 10mA, Ib = 1mA
Ic = 200mA, Ib = 20mA
Base-Emitter Saturation Voltage
V
BE(sat)
V
0.2
0.4
Ic = 10mA, Ib = 1mA
Ic = 200mA, Ib = 20mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
450
350
80
100
100
100
Vce = 1V, Ic = 100uA
Vce = 1V, Ic = 10mA
Vce = 1V, Ic = 100mA
Vce = 5V, Ic = 150mA
DC Current Gain
h
FE
ON CHARACTERISTICS
nA
50
Veb = 4 V
Emitter Cutoff Current
I
EBO
nA
50
Vce = 40 V
Collector Cutoff Current
I
CES
nA
50
Vcb = 50 V
Collector Cutoff Current
I
CBO
V
6
Ie = 10 uA
Emitter to Base Voltage
BV
EBO
V
60
Ic = 10 uA
Collector to Base Voltage
BV
CBO
V
45
Ic = 1.0 mA
Collector to Emitter Voltage
BV
CEO
OFF CHARACTERISTICS
Units
Max
Min
Test Conditions
Parameter
Symbol
Electrical Characteristics
T
A = 25°C unless otherwise noted
NPN & PNP Complementary Dual Transistor
(continued)
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
OB
TYP
dB
2.5
Vce = 5V, Ic = 100uA,
Rs = 2kohms, f = 1 kHz
Noise Figure
NF
MHz
300
Vce = 20V, Ic = 20mA, f = 100MHz
Current Gain - Bandwidth Product
f
T
pF
4.5
Vcb = 10V, f = 1MHz
Page 2 of 2
fmb1020.lwpPr10&68(Y4)
1998 Fairchild Semiconductor Corporation
F
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