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參數(shù)資料
| 型號： | FM6100-T |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 80K |
| 代理商： | FM6100-T |
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FM620-T THRU FM6100-T)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
1.0
2.0
3.0
4.0
5.0
6.0
.1 .3 .5 .7 .9 1.1 1.3 1.5
3.0
.1
1.0
10
100
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
REVERSE LEAKAGE CURRENT, (mA)
0 20 40 60 80 100 120 140
.01
Tj=75 C
FM620-T~FM640-T
FM650-T~FM6100-T
FM650-T~FM660-T
FM620-T~FM640-T
Tj=25 C
Tj=25 C
AMBIENT TEMPERATURE,( C)
0
0
20
40
60
80
100
120
140
160
180
200
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
FIG.4-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
1000
1200
1400
800
600
400
200
0
.01 .05 .1 .5 1 5 10 50 100
60
30
0
90
150
120
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
PEAK FORWARD SURGE CURRENT,(A)
相關PDF資料 |
PDF描述 |
|---|---|
| FM620-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM630-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM640-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM650-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM660-T | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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參數(shù)描述 |
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