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參數(shù)資料
| 型號(hào)： | FM5822 |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Silicon epitaxial planer type |
| 中文描述： | 硅外延龍門(mén) |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大小： | 25K |
| 代理商： | FM5822 |
RECTRON
RATING AND CHARACTERISTIC CURVES ( FM5820 THRU FM5822 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
A
LEAD TEMPERATURE, ( )
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
20
40
60
80
100
120
140
4
3
2
1
0
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
J
REVERSE VOLTAGE, ( V )
1000
800
600
400
200
100
80
60
20
10.1
.4
1.0
4
10
40
TJ = 25
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
I
TJ = 25
1% Duty Cycle
FM5820
FM5821
FM5822
INSTANTANEOUS FORWARD VOLTAGE, (V)
.2
.3
.4
.5
.6
.7
.8
.9
.1
1.0
10
20
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
I
T
J
= 125
T
J
= 75
FM5820
FM5821~FM5822
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
0
20
40
60
80
100 120 140
.001
.01
.1
1.0
10
FIG. 3 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
P
NUMBER OF CYCLE AT 60Hz
1
2
5
10
20
50
100
80
70
60
50
40
30
20
10
TL = 75
(JEDEC Method)
P.C.B Mounted on
0.4X0.4"(10X10mm)
copper pad areas
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM5822V-A | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM75M8 | DIGITAL THERMOMETER|CMOS|SOP|8PIN |
| FM75MM8 | DIGITAL THERMOMETER|CMOS|TSSOP|8PIN |
| FM7843 | 4-wire resistive touch screen input controller integrated circui |
| FM805S7 | Analog IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM5822A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes |
| FM5822-A | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5822-AL | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5822-ALN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5822-AN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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