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參數(shù)資料
| 型號： | FM580-B |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 80K |
| 代理商： | FM580-B |
FM520-B THRU FM5100-B
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00878 ounce, 0.293 gram
(V)
(V)
(V)
(V)
(
o
C)
FM520-B
SS52
20
14
20
FM530-B
SS53
30
21
30
FM540-B
SS54
40
28
40
FM550-B
SS55
50
35
50
FM560-B
SS56
60
42
60
FM580-B
SS58
80
56
80
FM5100-B
S510
100
70
100
-55 to +150
0.70
0.85
Operating
temperature
V
F
*4
SYMBOLS
MARKING
CODE
0.55
-55 to +125
V
RRM
*1
V
RMS
*2
V
R
*3
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
5.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
150
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
50
mA
Thermal resistance
Junction to lead
R
q
JL
12
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
380
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.213(5.4)
0.197(5.0)
0.016(0.4) Typ.
0.142(3.6)
0.126(3.2)
0.173(4.4)
0.157(4.0)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM5100-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM520 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM530 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM540 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM550 | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM580L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 5.0 Ampere |
| FM580-T | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM5817 | 功能描述:二極管 - 通用，功率，開關(guān) SM Schot Bar Rect SMA,1A,20V RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
| FM5817_06 | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere |
| FM5817L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
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