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參數(shù)資料
| 型號(hào)： | FM400TU-3A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| 中文描述： | 大功率開關(guān)使用絕緣包裝 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 117K |
| 代理商： | FM400TU-3A |
May 2006
PERFORMANCE CURVES
MITSUBISHI <MOSFET MODULE>
FM400TU-3A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
0
50
150
200
100
300
250
350
400
0
0.4
0.8
1.2
1.6
2.0
C
DRAIN-SOURCE VOLTAGE V
DS
(V)
0
300
100
200
400
5
7
9
11
13
15
0
1.0
1.5
0.5
2.0
2.5
3.0
0
4
8
12
16
20
0
1
2
3
4
7
5
6
0
40
80
120
160
20
60
100
140
0
3
4
1
2
5
6
7
0
40
80
120
160
20
60
100
140
10
10
1
2
3
5
7
10
2
2
3
5
7
10
–1
2
10
0
3
5 7
2
10
1
3
5 7
2
10
2
3
5 7
V
GS
= 20V
T
ch
= 25
°
C
V
GS
= 12V
V
GS
= 15V
15V
12V
10V
9V
I
D
= 200A
I
D
= 200A
I
D
= 100A
I
D
= 400A
V
DS
= 10V
T
ch
= 25
°
C
T
ch
= 125
°
C
V
DS
= 10V
I
D
= 20mA
C
iss
C
oss
C
rss
V
GS
= 0V
TRANSFER CHARACTERISTICS
(TYPICAL)
D
D
(
GATE-SOURCE VOLTAGE V
GS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
(
DRAIN-SOURCE VOLTAGE V
DS
(V)
CHANNEL TEMPERATURE T
ch
(
°
C)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
D
O
D
(
)
CHANNEL TEMPERATURE T
ch
(
°
C)
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
G
G
(
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
D
O
D
(
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
T
ch
= 25
°
C
Chip
Chip
Chip
Chip
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| FM400TU-3A_09 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE |
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