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參數(shù)資料
| 型號(hào)： | FM380-A |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | 2mm TERMINAL STRIP |
| 中文描述： | 硅外延龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | FM380-A |
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
0.185(4.8)
0.177(4.4)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.165(4.2)
0.150(3.8)
0.067(1.7)
0.060(1.5)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMA
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
FM320-A THRU FM3100-A
Formosa MS
(V)
(V)
(V)
(V)
(
o
C)
FM320-A
SS32
20
14
20
FM330-A
SS33
30
21
30
FM340-A
SS34
40
28
40
FM350-A
SS35
50
35
50
FM360-A
SS36
60
42
60
FM380-A
SS38
80
56
80
FM3100-A
S310
100
70
100
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
0.50
0.75
0.85
-55 to +125
-55 to +150
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
80
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
20
mA
Thermal resistance
Junction to ambient
R
q
JA
80
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
250
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM340-A | Silicon epitaxial planer type |
| FM360-A | HEADER, IDE, 2X5, 2MM, VT, SMT |
| FM350-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM3100-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM320-B | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM380-AL | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM380-ALN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM380-AN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM380-B | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM380L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 3.0 Ampere |
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