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參數(shù)資料
| 型號(hào)： | FM280 |
| 廠商： | RECTRON LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 2mm TERMINAL STRIP |
| 中文描述： | 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 29K |
| 代理商： | FM280 |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 100 Volts CURRENT 2.0 Amperes
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FM220
THRU
FM2100
DO-214AA
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
NOTES :
1. Thermal Resistance (Junction to Ambient).
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. P.C.B Monuted with 0.2X0.2” (5.0X5.0mm
2
) copper pad area.
* Epoxy: Device has UL flammability classification 94V-O
Dimensions in inches and (millimeters)
2001-5
CHARACTERISTICS
Maximum Average Reverse Current
at Rated DC Blocking Voltage
V
F
SYMBOL
I
R
mAmps
mAmps
Maximum Instantaneous Forward Voltage at 2.0A DC
Volts
1.0
20
@T
A
= 25
@T
A
= 100
o
C
o
C
.55
.70
UNITS
FM220
FM240
FM250
FM260
FM230
.85
FM280 FM2100
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Lead Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
SYMBOL
V
RRM
V
DC
I
FSM
C
J
T
STG
V
RMS
UNITS
Volts
Volts
Volts
Amps
2.0
50
40
130
Amps
0
C/W
pF
0
C
Storage Temperature Range
I
O
-65 to + 125
Operating Temperature Range
T
J
FM220
20
FM240
40
FM280
80
FM2100
100
FM230
30
50
60
14
28
35
42
21
20
40
50
60
30
-65 to + 150
-65 to + 150
0
C
R
θ
JA
FM250
FM260
56
70
80
100
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
0.030 (0.76)
0.060 (1.52)
0.084 (2.13)
0.096 (2.44)
0.160 (4.06)
0.180 (4.57)
0.130 (3.30)
0.155 (3.94)
0.083 (2.11)
0.077 (1.96)
MECHANICAL DATA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM260 | Silicon epitaxial planer type |
| FM220 | Silicon epitaxial planer type |
| FM230 | Silicon epitaxial planer type |
| FM2100 | Silicon epitaxial planer type |
| FM240 | CONN HEADER .05 40POS DUAL SMD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM280-C | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM280L | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 2.0 Ampere |
| FM280-L | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM280-LN | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM280-M | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Silicon epitaxial planer type |
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