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參數(shù)資料
| 型號： | FM27C256Q150 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 262,144-Bit (32K x 8) High Performance CMOS EPROM |
| 中文描述： | 32K X 8 UVPROM, 150 ns, CDIP28 |
| 封裝： | WINDOWED, CERDIP-28 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 103K |
| 代理商： | FM27C256Q150 |
4
www.fairchildsemi.com
F
FM27C256
AC Test Conditions
Output Load
1 TTL Gate and CL = 100 pF (Note 8)
Input Rise and Fall Times
≤
5 ns
Input Pulse Levels
0.45 to 2.4V
Timing Measurement Reference Level (Note 10)
Inputs
Outputs
0.8V and 2.0V
0.8V and 2.0V
AC Waveforms
(Note 6) (Note 7) (Note 9)
Note 1:
Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent damage to the device. This is stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Note 2:
This parameter is only sampled and is not 100% tested.
Note 3:
OE may be delayed up to t
ACC
- t
OE
after the falling edge of CE without impacting t
ACC
.
Note 4:
The t
and t
compare level is determined as follows:
High to TRI-STATE
, the measured V
OH1
(DC) - 0.10V;
Low to TRI-STATE, the measured V
OL1
(DC) + 0.10V.
Note 5:
TRI-STATE may be attained using OE or CE.
Note 6:
The power switching characteristics of EPROMs require careful device decoupling. It is recommended that at least a 0.1
μ
F ceramic capacitor be used on every device
between V
CC
and GND.
Note 7:
The outputs must be restricted to V
CC
+ 1.0V to avoid latch-up and device damage.
Note 8:
TTL Gate: I
= 1.6 mA, I
= -400
μ
A.
C
L
= 100 pF includes fixture capacitance.
Note 9:
V
PP
may be connected to V
CC
except during programming.
Note 10:
Inputs and outputs can undershoot to -2.0V for 20 ns Max.
Note 11:
CMOS inputs: V
IL
= GND
±
0.3V, V
IH
= V
CC
±
0.3V.
ADDRESSES VALID
VALID OUTPUT
Hi-Z
Hi-Z
2.0V
0.8V
2.0V
0.8V
2.0V
0.8V
2.0V
0.8V
ADDRESSES
CE
OE
OUTPUT
t
OE
(Note 3)
t
(NACC
t
CE
t
CE
(Notes 4, 5)
t
OH
t
(Notes 4, 5)
DS800034-4
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| FM27C256QE150 | 262,144-Bit (32K x 8) High Performance CMOS EPROM |
| FM27C256NE120 | 262,144-Bit (32K x 8) High Performance CMOS EPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM27C256Q45 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| FM27C256Q55 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| FM27C256Q70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 EPROM |
| FM27C256Q90 | 功能描述:可擦除可編程ROM DIP-28 RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
| FM27C256QE120 | 功能描述:可擦除可編程ROM RoHS:否 制造商:Maxim Integrated 類型: 存儲容量:1024 bit 組織:1 K x 1 接口類型: 工作電流:5 uA 編程電壓: 工作電源電壓:2.8 V to 6 V 最大工作溫度:+ 85 C 安裝風格:Through Hole 封裝 / 箱體:TO-92 |
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