參數(shù)資料
型號: FM22L16-55-TG
廠商: Electronic Theatre Controls, Inc.
英文描述: 4Mbit FRAM Memory
中文描述: 的4Mb FRAM存儲器
文件頁數(shù): 8/15頁
文件大?。?/td> 214K
代理商: FM22L16-55-TG
FM22L16
Rev. 1.0
Mar. 2007
Page 8 of 15
Electrical Specifications
Absolute Maximum Ratings
Symbol
V
DD
V
IN
Description
Power Supply Voltage with respect to V
SS
Voltage on any signal pin with respect to V
SS
Ratings
-1.0V to +4.5V
-1.0V to +4.5V and
V
IN
< V
DD
+1V
-55
°
C to +125
°
C
300
°
C
T
STG
T
LEAD
Storage Temperature
Lead Temperature (Soldering, 10 seconds)
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a
stress rating only, and the functional operation of the device at these or any other conditions above those listed in the
operational section of this specification is not implied. Exposure to absolute maximum ratings conditions for extended
periods may affect device reliability.
DC Operating Conditions
(T
A
= -40
°
C to + 85
°
C, V
DD
= 2.7V to 3.6V unless otherwise specified)
Symbol Parameter
V
DD
Power Supply
I
DD1
V
DD
Supply Current
I
DD2
V
DD
Supply Current – CMOS
I
SB2
Standby Current – CMOS
I
ZZ
Sleep Mode Current
I
LI
Input Leakage Current
I
LO
Output Leakage Current
V
IH
Input High Voltage
V
IL
Input Low Voltage
V
OH1
Output High Voltage (
I
OH
= -1.0 mA)
V
OH2
Output High Voltage (
I
OH
= -100
μ
A)
V
OL1
Output Low Voltage (
I
OL
= 2.1 mA)
V
OL2
Output Low Voltage (
I
OL
= 100
μ
A)
Notes
1.
V
DD
= 3.6V, /CE cycling at min. cycle time. All inputs toggling at CMOS levels (0.2V or V
DD
-0.2V), all DQ pins unloaded.
2.
V
DD
= 3.6V, /CE at V
SS
, All other pins are static and at CMOS levels (0.2V or V
DD
-0.2V), /ZZ is high.
3.
V
DD
= 3.6V, /CE at V
DD
, All other pins are static and at CMOS levels (0.2V or V
DD
-0.2V), /ZZ is high.
4.
V
DD
= 3.6V, /ZZ is low, all other inputs at CMOS levels (0.2V or V
DD
-0.2V).
Min
2.7
2.2
-0.3
2.4
V
DD
-0.2
Typ
3.3
Max
3.6
18
1.5
150
5
±
1
±
1
V
DD
+ 0.3
0.6
0.4
0.2
Units
V
mA
mA
μ
A
μ
A
μ
A
μ
A
V
V
V
V
V
V
Notes
1
2
3
4
-
-
-
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