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參數(shù)資料
| 型號： | FM18L08 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | .050 X .050 MICRO STRIPS |
| 中文描述： | 256Kb的2.7 - 3.6V的Bytewide FRAM存儲器 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 80K |
| 代理商： | FM18L08 |
Ramtron
FM18L08
23 March 2001
4/11
access. All memory cycles consist of a memory
access and a pre-charge. The pre-charge is user
initiated by taking the /CE signal high or inactive. It
must remain high for at least the minimum pre-charge
timing specification.
The user dictates the beginning of this operation
since a pre-charge will not begin until /CE rises.
However, the device has a maximum /CE low time
specification that must be satisfied.
Applications
As a true nonvolatile RAM, the FM18L08 fits into
many diverse applications. Clearly, its monolithic
nature and high performance make it superior to
battery-backed SRAM in most every application.
Unlimited endurance allows the FM18L08 to be used
in applications that could not take advantage of the
previous generation of RAM products. This
applications guide is intended to facilitate the
transition from BBSRAM to FRAM. It is divided into
two parts. First is a treatment of the advantages of
FRAM memory compared with battery-backed
SRAM. Second is a design guide, which highlights
the simple design considerations that should be
reviewed in both retrofit and new design situations.
FRAM Advantages
Although battery-backed SRAM is a mature and
established solution, it has numerous weaknesses.
These stem directly or indirectly from the presence of
the battery. FRAM uses an inherently nonvolatile
storage mechanism that requires no battery. It
therefore eliminates these weaknesses. The major
considerations in upgrading to FRAM are as follows.
Construction Issues
1.
Cost
The cost of both the component and the
manufacturing overhead of battery-backed SRAM is
high. FRAM with its monolithic construction is
inherently a lower cost solution. In addition, there is
no ‘built-in’ rework step required for battery
attachment when using surface mount parts.
Therefore assembly is streamlined and more cost
effective. In the case of DIP battery-backed modules,
the user is constrained to through-hole assembly
techniques and a board wash using no water.
2.
Humidity
A typical battery-backed SRAM module is qualified at
60o C, 90% Rh, no bias, and no pressure. This is
because
the
multi-component
vulnerable to moisture, not to mention dirt. FRAM is
assemblies
are
qualified using HAST – highly accelerated stress test.
This requires 120o C at 85% Rh, 24.4 psia at VDD.
3.
System reliability
Data integrity must be in question when using a
battery-backed
SRAM.
vulnerable to shock and vibration. If the battery
contact comes loose, data will be lost. In addition a
negative voltage, even a momentary undershoot, on
any pin of a battery-backed SRAM can cause data
loss. The negative voltage causes current to be drawn
directly from the battery. These momentary short
circuits can greatly weaken a battery and reduce its
capacity over time. In general, there is no way to
monitor the lost battery capacity. Should an
undershoot occur in a battery backed system during a
power down, data can be lost immediately.
4.
Space
Certain disadvantages of battery-backed SRAM, such
as susceptibility to shock, can be reduced by using
the old fashioned DIP module. However, this
alternative takes up board space, height, and dictates
through-hole assembly. FRAM offers a true surface-
mount solution that uses 25% of the board space.
No multi-piece assemblies, no connectors, and no
modules. A real nonvolatile RAM is finally
available!
They
are
inherently
Direct Battery Issues
5.
Field maintenance
Batteries, no matter how mature, are a built-in
maintenance problem. They eventually must be
replaced. Despite long life projections, it is impossible
to know if any individual battery will last considering
all of the factors that can degrade them.
6.
Environmental
Lithium batteries are widely regarded as an
environmental problem. They are a potential fire
hazard and proper disposal can be a burden. In
addition, shipping of lithium batteries may be
restricted.
7.
Style!
Backing up an SRAM with a battery is an old-
fashioned approach. In many cases, such modules are
the only through-hole component in sight. FRAM is
the latest memory technology and it is changing the
way systems are designed.
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| FM18L08-70-P | .050 X .050 MICRO STRIPS |
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| FM1F4N | .050 X .050 MICRO STRIPS |
| FM209 | 9600/14400 BPS MONOFAX MODEM FAMILY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM18L08_07 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:256Kb Bytewide FRAM Memory |
| FM18L08-70-P | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-PG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-S | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-SG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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