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參數資料
| 型號： | FM18L08 |
| 廠商： | Ramtron International Corp. |
| 英文描述： | 256Kb Bytewide FRAM Memory(256Kb寬字節(jié)FRAM存儲器) |
| 中文描述： | FRAM存儲器的256Kb Bytewide（256Kb的寬字節(jié)的FRAM存儲器） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 81K |
| 代理商： | FM18L08 |
Product Preview
FM18L08
256Kb Bytewide FRAM Memory
This is a product under development. Characteristic data and other
specifications are design goals. Ramtron reserves the right to change
or discontinue the product without notice.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058
www.ramtron.com
Rev 0.3
March 2002
1 of 12
Features
256K bit Ferroelectric NonVolatile RAM
Organized as 32,768 x 8 bits
10 year Data Retention
Unlimited Read/Write Cycles
NoDelay Writes
Advanced High-Reliability Ferroelectric Process
Superior to Battery-Backed SRAM
No Battery Concerns
Monolithic Reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
SRAM & EEPROM Compatible
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns Access Time
140 ns Cycle Time
Low Power Operation
3.0V to 3.65V Operation
15 mA Active Current
15
μ
A Standby Current
Industry Standard Configuration
Industrial Temperature -40
°
C to +85
°
C
28-pin SOIC or DIP
Description
The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and reads and writes like a RAM. It
provides data retention for 10 years while eliminating
the reliability concerns, functional disadvantages and
system design complexities of battery-backed SRAM
(BBSRAM). Fast write timing and high write
endurance make FRAM superior to other types of
nonvolatile memory.
In-system operation of the FM18L08 is very similar
to other RAM based devices. Read cycle and write
cycle times are equal. The FRAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18L08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a surface-mount package improves the
manufacturability of new designs, while the DIP
package facilitates simple design retrofits. Device
specifications are guaranteed over a temperature
range of -40°C to +85°C.
Pin Configuration
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
CE
A10
OE
A11
A9
A8
A13
WE
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Ordering Information
70 ns access, 28-pin SOIC
FM18L08-70-P
70 ns access, 28-pin DIP
FM18L08-70-S
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FM18L08_07 | 制造商:RAMTRON 制造商全稱:RAMTRON 功能描述:256Kb Bytewide FRAM Memory |
| FM18L08-70-P | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-PG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-S | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM18L08-70-SG | 功能描述:F-RAM 256K (32Kx8) 70ns 3V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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