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參數(shù)資料
| 型號(hào)： | FLM8596-15F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | X-Band Internally Matched FET |
| 中文描述： | X波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | FLM8596-15F |
X-Band Internally Matched FET
FEATURES
High Output Power: P1dB=42.0dBm(Typ.)
High Gain: G1dB=7.5dB(Typ.)
High PAE:
η
add=32%(Typ.)
Broad Band: 8.5~9.6GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
O
C)
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
O
C)
CASE STYLE: IB
Edition 1.2
September 2004
1
FLM8596-15F
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Item
Symbol
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
V
DS
V
GS
P
T
T
stg
15
-5
57.7
-65 to +175
V
V
W
o
C
Channel Temperature
T
ch
175
o
C
Power Gain at 1dB G.C.P.
Limit
Typ.
7.2 10.8
Item
Symbol
Test Conditions
Unit
Drain Current
Transconductance
Output Power at 1dB G.C.P.
Gain Flatness
I
DSS
g
m
V
p
P
1dB
G
A
mS
V
V
dB
dBm
Min.
-
Max.
Drain Current
I
dsr
A
-
4500 -
-0.5 -1.5 -3.0
-5.0 -
-
41.0 42.0 -
6.5 7.5 -
-
4.0 5.0
V
DS
=10V
f=8.5 - 9.6 GHz
I
DS
=0.5Idss
Zs=Z
L
=50
Power-added Efficiency
η
add
%
dB
-
32 -
-
-
1.2
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=2.4A
V
DS
=5V, I
DS
=240mA
I
GS
=-300
μ
A
Pinch-off Voltage
Gate-Source Breakdown Voltage
V
GSO
G
1dB
Thermal Resistance
R
th
T
ch
Channel to Case
-
2.3 2.6
o
C/W
Channel Temperature Rise
10V X Idsr X Rth
-
-
100
o
C
DESCRIPTION
The FLM8596-15F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
Recommended Operating Condition(Case Temperature Tc=25
O
C)
Item
Symbol
Condition
Unit
DC Input Voltage
Gate Current
V
DS
I
GS
≤
10
≤
16.7
≥
-3.62
V
mA
Limit
R
G
=50
Gate Current
I
GR
R
G
=50
mA
G.C.P.:Gain Compression Point
ESD
Class
Ⅲ
2000V
~
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