參數(shù)資料
型號： FLL810IQ-4C
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： L-Band High Power GaAs FET
中文描述： L波段高功率GaAs場效應(yīng)管
文件頁數(shù)： 3/4頁
文件大?。?/td> 130K
代理商： FLL810IQ-4C
3
FLL810IQ-4C
L-Band High Power GaAs FET
S-PARAMETERS
VDS= 12V, IDS= 2500mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
4200
4300
4400
4500
.499
.617
.703
.761
.793
.801
.783
.747
.644
.492
.315
.397
.603
.743
.825
.878
.910
.937
.949
.953
.956
-103.9
-120.1
-131.7
-141.4
-148.6
-155.5
-162.8
-169.1
-176.8
178.6
-166.2
-130.1
-128.8
-135.6
-143.0
-148.0
-152.6
-156.1
-159.8
-162.7
-165.1
1.973
1.880
1.735
1.784
1.689
1.803
1.949
2.087
2.398
2.627
2.798
2.612
2.173
1.814
1.493
1.222
.999
.849
.735
.681
.666
-113.4
-125.9
-142.2
-153.8
-163.9
-178.8
171.0
154.5
136.9
116.1
88.0
59.6
33.1
13.3
-5.2
-20.4
-34.6
-46.9
-55.8
-67.5
-82.1
.017
.017
.016
.016
.017
.017
.019
.021
.024
.031
.036
.034
.031
.024
.022
.019
.019
.017
.018
.018
.020
-111.7
-134.2
-149.9
-167.5
-176.4
161.0
136.6
119.4
94.7
80.3
48.3
15.7
-8.8
-33.0
-47.8
-59.2
-67.0
-76.4
-86.6
-96.7
-107.9
.796
.773
.752
.729
.714
.678
.656
.604
.566
.506
.468
.504
.558
.580
.559
.535
.483
.418
.376
.343
.386
152.9
151.8
150.1
149.5
148.0
146.2
143.9
140.8
138.8
137.6
143.3
148.1
145.3
136.4
125.9
113.4
97.7
78.8
53.9
18.9
-17.4
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
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