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參數(shù)資料
| 型號(hào)： | FLL800IQ-2C |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L波段高功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 190K |
| 代理商： | FLL800IQ-2C |
1
Edition 1.1
October 2004
FLL800IQ-2C
L-Band High Power GaAs FET
DESCRIPTION
The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers.This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in W-CDMA and IMT 2000 base
station amplifiers as it offers high gain, long term reliability and ease of use.
FEATURES
Push-Pull Configuration
High Power Output: 80W (Typ.)
High PAE: 50% (Typ.)
Broad Frequency Range: 2100 to 2200 MHz.
Suitable for class AB operation.
APPLICATIONS
Solid State Base-Station Power Amplifier.
W-CDMA and IMT 2000 Communication Systems.
Item
Drain Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Symbol
I
DSS
V
GSO
-
8
-
-0.1
-0.3
-0.5
-5
-
-
48.0
49.0
-
10.0
11.0
-
-
50
-
-
0.8
1.1
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 220mA
I
GS
= -2.2mA
Channel to Case
V
DS
= 12V
f = 2.17 GHz
I
DS
= 2.0A
Pin = 40.0dBm
A
V
dB
dBm
V
°
C/W
%
V
p
P
out
GL
η
add
Drain Current
-
11.5
15
A
I
DSR
R
th
Conditions
Unit
Limits
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
Tc = 25
°
C
V
V
W
°
C
°
C
T
ch
Condition
136
-65 to +175
+175
-5
15
Rating
Unit
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25
°
C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 10
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
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