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參數(shù)資料
| 型號： | FLL400IK-2C |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | High Voltage - High Power GaAs FET |
| 中文描述： | 高電壓-高功率GaAs場效應管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 64K |
| 代理商： | FLL400IK-2C |
High Voltage - High Power GaAs FET
FEATURES
High Output Power: P1dB=46.0dBm(Typ.)
High Gain: G1dB=13.0dB(Typ.)
High PAE:
η
add=45%(Typ.)
Broad Band: 2.11~2.17GHz
Hermetically Sealed Package
DESCRIPTION
The FLL400IK-2C is a 40 Watt GaAs FET that is specially suited
for use in W-CDMA base station amplifier as long term reliability.
CASE STYLE: IK
Edition 1.2
September 2004
1
FLL400IK-2C
Class
III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
PTot
T
stg
T
ch
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
DC Input Voltage
VDS
Forward Gate Current
IGF
Reverse Gate Current
IGR
Operating channel temperature Tch
Condition
Unit
V
mA
mA
o
C
RG=5
W
RG=5
W
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
-0.1
-5.0
45.0
12.0
-
-
-
Typ. Max.
-0.3
-
46.0
13.0
6.7
45.0
1.3
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Thermal Resistance
Vp
VDS=5V,IDS=110mA
-0.5
-
-
-
8.7
-
1.5
V
V
VGSO
P1dB
G1dB
Idsr
h
add
Rth
IGS=-1.1mA
dBm
dB
A
%
o
C/W
Unit
Rating
15
-5
100
-65 to +175
175
<85
>-25
145
Limit
12
Item
Symbol
Condition
Limit
V
DD
=12V
f=2.17GHz
IDS(DC)=1.5A
Pin=35dBm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL400IP-2 | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET |
| FLL400IP-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Pwr GaAs FET(45.0dBm@3.6GHz), Bulk |
| FLL410IK-3C | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band High Power GaAs FET |
| FLL410IK-4C | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band High Power GaAs FET (46dBm@3.7GHz), Bulk |
| FLL500IQ-2 | 制造商:FUJITSU 功能描述: |
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