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參數(shù)資料
| 型號： | FLL300IL-1 |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | L-Band Medium & High Power GaAs FET |
| 中文描述： | L波段中等 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 116K |
| 代理商： | FLL300IL-1 |
3
FLL300IL-1
L-Band Medium & High Power GaAs FET
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS
≈
0.5 IDSS
f = 0.9 GHz
23 25
27
29 31
33
Input Power (dBm)
46
44
42
40
38
36
30
45
60
15
0
O
η
add
Pout
η
a
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180
°
+90
°
0
°
-90
°
S21
S12
1
2
1.5GHz
1.5GHz
1.5GHz
1.5GHz
1.0
1.3
1.0
1.0
1.0
.02
.01
250
50
100
10
25
SCALE FOR |S21|
S
0.5GHz
0.5GHz
0.5GHz
S-PARAMETERS
VDS= 10V, IDS= 6000mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
500
600
700
800
900
1000
1100
1200
1300
1400
1500
.961
.957
.956
.955
.948
.943
.933
.923
.910
.898
.875
176.7
174.7
172.5
170.6
168.2
166.0
161.9
158.8
155.1
151.0
145.8
1.318
1.162
1.053
.989
.951
.944
.952
.975
1.021
1.094
1.182
70.0
64.9
59.9
55.1
49.6
44.5
37.9
31.7
24.7
16.8
8.4
.005
.005
.006
.007
.008
.009
.010
.012
.015
.017
.023
26.1
26.6
33.0
32.2
28.6
25.7
32.6
25.2
23.1
19.7
15.1
.889
.884
.880
.871
.865
.855
.841
.828
.810
.789
.760
174.0
173.0
171.7
170.5
169.5
167.7
167.0
165.1
163.3
161.1
158.9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FLL300IL-2 | L-Band Medium & High Power GaAs FET |
| FLL300IL-3 | L-Band Medium & High Power GaAs FET |
| FLL310IQ-3A | High Voltage - High Power GaAs FET |
| FLL400IK-2 | High Voltage - High Power GaAs FET |
| FLLD258 | SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLL300IL-2 | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET |
| FLL300IL-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Power GaAs FET(44.5dBm@2.6GHz), Bulk |
| FLL300IP-4 | 制造商:FUJITSU 功能描述: |
| FLL310IQ-3A | 制造商:FUJITSU 功能描述: |
| FLL351ME | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:L-band medium & high power gaas FTEs |
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