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參數資料
| 型號： | FLC257MH-8 |
| 廠商： | FUJITSU LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | C-Band Power GaAs FET |
| 中文描述： | C BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | HERMETIC SEALED, METAL CERAMIC, CASE MH, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | FLC257MH-8 |
1
Edition 1.1
July 1999
FLC257MH-8
C-Band Power GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
15
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200
.
3.The operating channel temperature (Tch) should not exceed 145
°
C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
1000
1500
-
500
-
-1.0
-2.0
-3.5
-5
-
-
7.0
8.0
-
-
35
-
32.5
34.0
-
VDS = 5V, IDS =50mA
VDS = 5V, IDS =600mA
VDS = 5V, VGS = 0V
IGS = -50
μ
A
Channel to Case
VDS = 10V,
IDS
=
0.6 IDSS (Typ.),
f = 8.5 GHz
mA
mS
V
dB
%
dBm
V
Vp
VGSO
P1dB
G1dB
η
add
Thermal Resistance
-
8
10
°
C/W
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
G.C.P.: Gain Compression Point
CASE STYLE:
MH
DESCRIPTION
The FLC257MH-8 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 34.0dBm(Typ.)
High Gain: G1dB= 8.0dB(Typ.)
High PAE:
η
add= 35%(Typ.)
ProvenReliability
Hermetic Metal/Ceramic Package
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