參數(shù)資料
型號: FK7UM-12
廠商: POWEREX INC
元件分類: JFETs
英文描述: Nch POWER MOSFET HIGH-SPEED SWITCHING USE
中文描述: 7 A, 600 V, 1.63 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 2/5頁
文件大小: 52K
代理商: FK7UM-12
Feb.1999
V
V
μ
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
600
±
30
2
3.3
3
1.25
3.75
5.5
1100
125
17
30
30
100
35
1.5
±
10
1
4
1.63
4.89
2.0
1.0
150
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
25V, V
DS
= 0V
V
DS
= 600V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 3A, V
GS
= 10V
I
D
= 3A, V
GS
= 10V
I
D
= 3A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 3A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 3A, V
GS
= 0V
Channel to case
I
S
= 7A, d
is
/d
t
= –100A/
μ
s
MITSUBISHI Nch POWER MOSFET
FK7UM-12
HIGH-SPEED SWITCHING USE
200
160
120
80
40
0
200
150
100
50
0
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
2 3 5 710
1
2 3 5 710
2
10
0
2 3 5 710
3
5
3
2
T
C
= 25°C
Single Pulse
tw=10μs
100μs
1ms
10ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
P
D
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
D
D
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
PERFORMANCE CURVES
相關(guān)PDF資料
PDF描述
FK7VS-12 HIGH-SPEED SWITCHING USE
FK7VS-12 Nch POWER MOSFET HIGH-SPEED SWITCHING USE
FKB-7681_07 Ultra Low Profile Notebook Keyboard (64Keys)
FKB-7681 Ultra Low Profile Notebook Keyboard (64Keys)
FKB8729 STANDARD KEYBOARD 104/105-Key Keyboard
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FK7VS12 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | TO-263AB
FK7VS-12 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:MITSUBISHI Nch POWER MOSFET
FK80-30 功能描述:風(fēng)扇電線及配件 Fan Accessory FilterKit 80mm 30ppi RoHS:否 制造商:ebm-papst 類型:Finger Guard 適合風(fēng)扇大小:120 mm 系列:
FK80-45 功能描述:風(fēng)扇電線及配件 Fan Accessory FilterKit 80mm 45ppi RoHS:否 制造商:ebm-papst 類型:Finger Guard 適合風(fēng)扇大小:120 mm 系列:
FK8V03020L 功能描述:MOSFET Nch MOSFET 2.9x2.8mm Flat lead RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube