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參數(shù)資料
| 型號(hào)： | FK20UM-6 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 中文描述： | 20 A, 300 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 54K |
| 代理商： | FK20UM-6 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20UM-6
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
20
16
12
8
4
00
20
40
60
80
100
V
DS
= 50V
200V
Tch
= 25°C
I
D
= 20A
100V
10
0
7
5
3
2
10
–1
0
10
1
7
5
3
2
50
100
150
200
250
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
2 3
5 7 10
1
10
3
7
5
3
2
10
2
7
5
3
2
2 3
5 7 10
2
10
0
10
1
Tch = 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 25
t
f
t
d(off)
t
r
t
d(on)
2 3 5 710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
5
3
2
2 3 5 710
1
2 3 5 710
0
2 3
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
40
32
24
16
8
00
0.8
1.6
2.4
3.2
4.0
T
C
= 125°C
25°C
75°C
V
GS
= 0V
Pulse Test
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
G
G
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
S
S
CHANNEL TEMPERATURE Tch (°C)
D
D
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
G
V
G
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
D
CHANNEL TEMPERATURE Tch (°C)
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