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參數(shù)資料
| 型號(hào)： | FK10VS-10 |
| 廠商： | POWEREX INC |
| 元件分類： | JFETs |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 10 A, 500 V, 1.13 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220S, 3 PIN |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 50K |
| 代理商： | FK10VS-10 |
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10VS-10
HIGH-SPEED SWITCHING USE
10
3
7
5
3
2
10
0
2 3
5 7 10
1
10
2
7
5
3
2
2 3
5 7 10
2
10
1
10
2
7
5
3
2
10
1
7
5
3
2
10
0
d
is/
d
t
= –100A/
μ
s
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25°C
T
ch
= 150°C
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57
23 57
23 57
23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
5
3
2
10
1
2 3
5 7 10
2
10
2
7
5
3
2
2 3
5 7 10
3
10
1
3
2
10
1
7
5
5
7
5
7
5
3
2
10
0
I
S
= 10A
V
GS
= 0V
V
DD
= 250V
I
rr
t
rr
T
ch
= 25°C
T
ch
= 150°C
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
D
(
D
(
R
r
(
R
r
(
R
r
(
SOURCE CURRENT I
S
(A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
R
r
(
SOURCE CURRENT d
is
/d
t
(–A/
μ
s)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH t
w
(s)
T
t
(
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FK10VS12 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-263AB |
| FK10VS-12 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:HIGH-SPEED SWITCHING USE |
| FK10VS9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-263AB |
| FK10VS-9 | 制造商:POWEREX 制造商全稱:Powerex Power Semiconductors 功能描述:HIGH-SPEED SWITCHING USE |
| FK11 | 制造商:TDK 制造商全稱:TDK Electronics 功能描述:Multilayer Ceramic Capacitors |
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