參數(shù)資料
型號: FK10SM-12
廠商: POWEREX INC
元件分類: JFETs
英文描述: 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 10 A, 600 V, 1.18 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 53K
代理商: FK10SM-12
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-12
HIGH-SPEED SWITCHING USE
10
1
7
5
3
2
10
–1
10
–1
2 3
5 7 10
0
10
0
7
5
3
2
2 3
5 7 10
1
T
C
= 25°C
V
DS
= 10V
Pulse Test
125°C
75°C
40
32
24
16
8
00
4
8
12
16
20
T
C
= 25°C
V
DS
=50V
Pulse Test
10
8
6
4
2
00
4
8
12
16
20
P
D
= 150W
T
C
= 25°C
Pulse Test
5V
4V
V
GS
= 20V
10V
6V
40
32
24
16
8
00
4
8
12
16
20
I
D
= 20A
T
C
= 25°C
Pulse Test
10A
5A
0
10
–1
2 3
5 710
0
2 3 5 710
1
2 3 5 710
2
2.0
1.6
1.2
0.8
0.4
T
C
= 25°C
Pulse Test
V
GS
= 10V
20V
20
16
12
8
4
00
10
20
30
40
50
P
D
=
150W
T
C
= 25°C
Pulse Test
4V
5V
V
GS
= 20V
10V
6V
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
D
D
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
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