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參數(shù)資料
| 型號： | FJX3015R |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Switching Application |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 42K |
| 代理商： | FJX3015R |
2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
F
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
Parameter
Value
50
50
10
100
200
150
-55 ~ 150
Units
V
V
V
mA
mW
°
C
°
C
Test Condition
I
C
=10
μ
A, I
E
=0
I
C
=100
μ
A, I
B
=0
V
CB
=40V, I
E
=0
V
CE
=5V, I
C
=10mA
I
C
=10mA, I
B
=0.5mA
V
CE
=10V, I
C
=5mA
V
CB
=10V, I
E
=0
f=1.0MHz
V
CE
=5V, I
C
=
100μΑ
V
CE
=0.3V, I
C
=20mA
Min.
50
50
Typ.
Max.
Units
V
V
μ
A
0.1
33
0.3
V
250
3.7
MHz
pF
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
0.3
V
V
3
1.5
0.20
2.2
0.22
2.9
0.25
K
FJX3015R
Switching Application
(Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R1=2.2K
, R2=10K
)
Equivalent Circuit
B
E
C
R1
R2
S15
Marking
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FJX3015RTF | 功能描述:開關晶體管 - 偏壓電阻器 NPN Si Transistor Epitaxial RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FJX3015RTF_Q | 功能描述:開關晶體管 - 偏壓電阻器 NPN Si Transistor Epitaxial RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FJX3904 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor |
| FJX3904_07 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
| FJX3904TF | 功能描述:兩極晶體管 - BJT NPN/60V/0.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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