參數資料
型號： FJX2222A
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號晶體管
英文描述： General Purpose Transistor
中文描述： 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： SOT-323, 3 PIN
文件頁數： 1/4頁
文件大小： 71K
代理商： FJX2222A
2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
F
1. Base 2. Emitter 3. Collector
1
2
SOT-323
3
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CES
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
* Pulse Test: PW
≤
300
μ
s, Duty Cycle
≤
2%
Parameter
Value
75
40
6
600
325
150
Units
V
V
V
mA
mW
°
C
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
Parameter
Test Condition
Min.
75
40
6
Max.
Units
V
V
V
μ
A
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
* DC Current Gain
I
C
=10
μ
A, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10
μ
A, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=10V, I
C
=0.1mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=500mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CE
=20V, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=100
μ
A, V
CE
=10V
R
S
=1K
, f=1kHz
V
CC
=30V, I
C
=150mA
V
BE
=0.5V, I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
0.01
35
50
75
100
40
300
V
CE
(sat)
* Collector-Emitter Saturation Voltage
0.3
1.0
1.2
2.0
V
V
V
V
V
BE
(sat)
* Base-Emitter Saturation Voltage
0.6
f
T
C
ob
NF
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
300
4
MHz
pF
dB
8
4
t
ON
Turn On Time
35
ns
t
OFF
Turn Off Time
285
ns
FJX2222A
General Purpose Transistor
Collector-Emitter Voltage: V
CEO
= 40V
Collector Dissipation: P
C
(max) = 325mW
S1P
Marking
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相關代理商/技術參數
參數描述
FJX2222A_10 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor
FJX2222ATF 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FJX2907 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor
FJX2907A 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:General Purpose Transistor
FJX2907ATF 功能描述:兩極晶體管 - BJT PNP Epitaxial Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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