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參數(shù)資料
| 型號(hào)： | FJV4104 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | PNP Epitaxial Silicon Transistor |
| 中文描述： | 進(jìn)步黨外延硅晶體管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | FJV4104 |
2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
F
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
P
C
Collector Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C
unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cut-off Current
h
FE
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
Parameter
Value
-50
-50
-10
-100
200
150
-55 ~ 150
Units
V
V
V
mA
mW
°
C
°
C
Test Condition
I
C
= -10
μ
A, I
E
=0
I
C
= -100
μ
A, I
B
=0
V
CB
= -40V, I
E
=0
V
CE
= -5V, I
C
= -5mA
I
C
= -10mA, I
B
= -0.5mA
V
CE
= -10V, I
C
=-5mA
V
CB
= -10V, I
E
=0
f=1.0MHz
V
CE
= -5V, I
C
= -100
μ
A
V
CE
= -0.3V, I
C
= -2mA
Min.
-50
-50
Typ.
Max.
Units
V
V
μ
A
-0.1
68
-0.3
V
200
5.5
MHz
pF
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Input Off Voltage
Input On Voltage
Input Resistor
Resistor Ratio
-0.5
V
V
-3
62
1.1
32
0.9
47
1
K
FJV4104R
Switching Application
(Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit
Built in bias Resistor (R
1
=47K
, R
2
=47K
)
Complement to FJV3104R
Equivalent Circuit
B
E
C
R1
R2
R74
Marking
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FJV4104R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| FJV4104RMTF | 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V/100mA/47K 47K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FJV4104RMTF_Q | 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V/100mA/47K 47K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| FJV4105R | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
| FJV4105RMTF | 功能描述:開關(guān)晶體管 - 偏壓電阻器 50V/100mA/4.7K 10K RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
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