- 您現在的位置：買賣IC網 > PDF目錄375800 > FJL6920YDTU (FAIRCHILD SEMICONDUCTOR CORP) NPN Triple Diffused Planar Silicon Transistor PDF資料下載
參數資料
| 型號： | FJL6920YDTU |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Triple Diffused Planar Silicon Transistor |
| 中文描述： | 20 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-264AA |
| 封裝： | TO-264, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 84K |
| 代理商： | FJL6920YDTU |
2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
F
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
I
CP
*
Collector Current (Pulse)
P
C
Collector Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
* Pulse Test: PW=300
μ
s, duty Cycle=2% Pulsed
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
I
CES
Collector Cut-off Current
I
CBO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
h
FE1
h
FE2
V
CE
(sat)
Collector-Emitter Saturation Voltage
V
BE
(sat)
Base-Emitter Saturation Voltage
t
STG
*
Storage Time
t
F
*
Fall Time
* Pulse Test: PW=20
μ
s, duty Cycle=1% Pulsed
Thermal Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
R
θ
jC
Thermal Resistance, Junction to Case
Parameter
Rating
1700
800
6
20
30
200
150
-55 ~ 150
Units
V
V
V
A
A
W
°
C
°
C
Test Conditions
V
CB
=1400V, R
BE
=0
V
CB
=800V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=500
μ
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=500
μ
A, I
C
=0
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=11A
I
C
=11A, I
B
=2.75A
I
C
=11A, I
B
=2.75A
V
CC
=200V, I
C
=10A, R
L
=20
I
B1
=2.0A, I
B2
= - 4.0A
Min.
Typ.
Max.
1
10
1
Units
mA
μ
A
mA
V
V
V
1700
800
6
8
5.5
DC Current Gain
8.5
3
1.5
3
0.2
V
V
μ
s
μ
s
0.15
Parameter
Typ
Max
0.625
Units
°
C/W
FJL6920
High Voltage Color Display Horizontal
Deflection Output
High Collector-Base Breakdown Voltage : BV
CBO
= 1700V
Low Saturation Voltage : V
CE
(sat) = 3V (Max.)
For Color Monitor
TO-264
1.Base 2.Collector 3.Emitter
相關PDF資料 |
PDF描述 |
|---|---|
| FJL6920 | NPN Triple Diffused Planar Silicon Transistor |
| FJN13003 | NPN Silicon Transistor Planar Silicon Transistor |
| FJN3301R | NPN Epitaxial Silicon Transistor |
| FJN3302R | NPN Epitaxial Silicon Transistor |
| FJN3303 | NPN Epitaxial Silicon Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| F-JM-1 | 制造商:Cosel Usa Inc 功能描述:Optional Accessories, OP Series |
| FJMA790 | 功能描述:兩極晶體管 - BJT PNP Epitaxial Silicon Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FJMVKITY | 功能描述:工具套件與外殼 Opti-Crimp Fiber Termination Kit RoHS:否 制造商:Molex 產品: 類型: 大小: |
| FJ-N119 | 制造商:Stellar Labs Power 功能描述:Fujitsu LifeBook Replacement Laptop Battery |
| FJ-N119H | 制造商:Stellar Labs Power 功能描述:Fujitsu LifeBook Replacement Laptop Battery |
發(fā)布緊急采購，3分鐘左右您將得到回復。