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參數(shù)資料
| 型號： | FJC790 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Camera Strobe Flash Application |
| 中文描述： | 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-89, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 25K |
| 代理商： | FJC790 |
2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
F
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25
°
C
unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current (DC)
P
C
Power Dissipation
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics
T
a
=25
°
C unless otherwise noted
Symbol
Parameter
BV
CBO
Collector-Base Breakdown Voltage
BV
CEO
Collector-Emitter Breakdown Voltage
BV
EBO
Emitter-Base Breakdown Voltage
I
CEO
Collector Cut-off Current
I
EBO
Emitter Cut-off Current
h
FE
DC Current Gain
Parameter
Value
-50
-40
-5
-2
0.5
150
- 55 ~ 150
Units
V
V
V
A
W
°
C
°
C
Test Condition
I
C
= -100
μ
A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -100
μ
A, I
C
= 0
V
CE
= -35V, V
B
= 0
V
EB
= -4V, I
C
V
CE
= -2V, I
C
= -10mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1mA
V
CE
= -2V, I
C
= -2mA
I
C
= -0.5A, I
B
= -5mA
I
C
= -1A, I
B
= -10mA
I
C
= -2A, I
B
= -50mA
I
C
= -1A, I
B
= -10mA
V
CE
= -2V, I
C
= 1A
V
CB
= -10V, I
E
= 0,
f = 1MHz
Min.
-50
-40
-5
Typ.
Max.
Units
V
V
V
μ
A
μ
A
-0.1
-0.1
800
300
250
200
150
V
CE
(sat)
Collector-Emitter Saturation Voltage
-250
-350
-450
-0.9
-0.8
mV
mV
mV
V
V
pF
V
BE
(sat)
V
BE
(on)
C
OB
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
20
FJC790
Camera Strobe Flash Application
Complement to FJC690
High Collector Current
Low Collector-Emitter Saturation Voltage
1. Base 2. Collector 3. Emitter
SOT-89
Marking: F79
1
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|---|---|
| FJC790_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor |
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