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FH102
No.5874-4/5
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
S Parameters
0
30
°
60
°
90
°
120
°
150
°
–30
°
–60
°
–90
°
–120
°
–150
°
±
180
°
0
30
°
60
°
2.0GHz
90
°
120
°
150
°
–30
°
–60
°
–90
°
–120
°
–150
°
±
180
°
j10
j25
j50
j100
j150
j200
j250
–j10
–j25
–j50
–j100
–j150
–j250
–j200
0
j10
j25
j50
j100
j150
j200
j250
–j10
–j25
–j50
–j100
–j150
–j200
–j250
0
10
25
V
CE
=5V
I
C
50
100
150
250 500
V
CE
=5V
I
C
=20mA
V
CE
=5V
I
C
=7mA
V
CE
=5V
I
C
=7mA
V
CE
=2V
I
C
=3mA
V
CE
=2V
I
C
=3mA
2.0GHz
2.0GHz
2.0GHz
2.0GHz
0.1GHz
0.1GHz
0.1GHz
10
25
50
100
V
CE
=5V
I
C
=20mA
150
250 500
V
CE
=5V
I
C
=7mA
V
CE
=2V
I
C
=3mA
2.0GHz
2.0GHz
2.0GHz
0.1GHz
V
CE
=5V
I
C
=20mA
V
CE
=5V
I
C
=7mA
0.08
V
CE
=2V
I
C
=3mA
2.0GHz
2.0GHz
0.1GHz
0.1GHz
0.1GHz
0.1GHz
4
8
12
16
20
0.04
0.12
0.16
0.2
f=100MHz,200 to 2000MHz(200MHz step)
f=100MHz,200 to 2000MHz(200MHz step)
f=100MHz,200 to 2000MHz(200MHz step)
f=100MHz,200 to 2000MHz(200MHz step)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FH103 | High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH104 | High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH105 | High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH201 | VCO OSC Circuit Applications |
| FH202 | VCO OSC Circuit Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FH102A | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH102A-TR-E | 功能描述:兩極晶體管 - BJT PCH+PCH 4V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FH103 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH104 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Frequency Low-Noise Amplifier, Differential Amplifier Applications |
| FH1040 | 制造商:Datak Corporation 功能描述:Fuse Holder |
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