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參數(shù)資料
| 型號(hào)： | FGW15N40A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Strobe Flash N-Channel Logic Level IGBT |
| 中文描述： | 8 A, 400 V, N-CHANNEL IGBT |
| 封裝： | TSSOP-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 112K |
| 代理商： | FGW15N40A |
FGW15N40A Rev. A2
www.fairchildsemi.com
F
2
Device Maximum Ratings
T
A
= 25°C unless otherwise noted
Package Marking and Ordering Information
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off State Characteristics
On State Characteristics
Dynamic Characteristics
Switching Characteristics
Thermal Characteristics
Notes:
1. Pulse Duration = 100
μ
sec
2. Mounted on a 1 inch
2
1oz copper pad
Symbol
BV
CES
I
C
I
CP
V
GES
V
GEP
P
D
T
J
T
STG
ESD
Parameter
Ratings
400
8
150
±6
±8
1.25
-40 to 150
-40 to 150
2
Units
V
A
A
V
V
W
°C
°C
kV
Collector to Emitter Breakdown Voltage
Collector Current Continuous(DC)
Collector Current Pulsed(100
μ
s)
Gate to Emitter Voltage Continuous(DC)
Gate to Emitter Voltage Pulsed
Power Dissipation Total T
C
= 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Electrostatic Discharge Voltage at 100pF, 1500
Device Marking
15N40A
Device
FGW15N40A
Package
TSSOP - 8
Tape Width
12mm / 16mm
Quantity
2500
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BV
CES
BV
GES
I
CES
Collector to Emitter Breakdown Voltage
I
C
= 1mA, V
GE
= 0V
I
GES
= ± 1mA
V
CE
= 400V
400
-
-
V
Gate-Emitter Breakdown Voltage
Collector to Emitter Leakage Current
±8
-
-
V
T
C
= +25
o
C
T
C
= +125
o
C
-
-
10
μ
A
-
-
250
μ
A
I
GES
Gate-Emitter Leakage Current
V
GE
= ± 8V
-
-
±10
μ
A
V
CE(SAT)
Collector to Emitter Saturation Voltage
I
C
= 150A, V
GE
= 4.0V
(NOTE 1)
-
4.4
6.0
V
Q
G(ON)
V
GEPL
V
GE(TH)
C
IES
Gate Charge
I
C
= 150A, V
CE
= 300V, V
GE
= 8V
I
C
= 150A, V
CE
= 300V
I
C
= 1.0mA,V
CE
= V
GE
V
CE
= 10V, V
GE
= 0V, f = 1MHz
-
41
-
nC
Gate to Emitter Plateau Voltage
-
3.3
-
V
Gate to Emitter Threshold Voltage
0.4
0.61
0.75
V
Input Capacitance
-
1800
-
pF
t
ON
t
d(ON)I
t
rI
t
OFF
t
d(OFF)I
t
fI
Turn-On Time
V
CE
= 300V, I
C
= 150A,
V
GE
= 4V, R
L
= 2
,
R
G
, T
J
= 25°C
-
0.91
-
μs
Current Turn-On Delay Time
-
0.18
-
μs
Current Rise Time
-
0.73
-
μs
Turn-Off Time
-
1.56
-
μs
Current Turn-Off Delay Time
-
0.46
-
μs
Current Fall Time
-
1.1
-
μs
R
θ
JA
Thermal Resistance Junction-Case
TSSOP - 8
(NOTE 2)
-
80
-
°C/W
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