參數(shù)資料
型號: FGP20N6S2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS II Series N-Channel IGBT
中文描述: 28 A, 600 V, N-CHANNEL IGBT, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁數(shù): 5/8頁
文件大小: 183K
代理商: FGP20N6S2
2003 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
C
,
0
20
40
V
GE
, GATE TO EMITTER VOLTAGE (V)
60
120
T
J
= 125
o
C
T
J
= -55
o
C
100
80
T
J
= 25
o
C
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
6
8
10
12
14
16
4
V
G
,
Q
G
, GATE CHARGE (nC)
I
G(REF)
= 1mA, R
L
= 42.6
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 600V
V
CE
= 400V
5
10
15
20
25
35
0
30
6
4
8
0
16
12
10
14
2
T
C
, CASE TEMPERATURE (
o
C)
E
T
,
m
J
R
G
= 25
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 14A
I
CE
= 7A
I
CE
= 3A
0.2
0
0.8
0.6
0.4
50
25
75
100
125
150
R
G
, GATE RESISTANCE (
)
E
T
,
m
J
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
0.1
0.05
10
1
I
CE
= 14A
1
10
100
1000
I
CE
= 7A
I
CE
= 3A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
0.0
0.4
1.2
0.8
FREQUENCY = 1MHz
C
OES
C
IES
60
70
80
90
100
0.2
0.6
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
6
2.0
9
2.2
2.6
2.4
8
10
11
12
16
2.8
V
C
,
PULSE DURATION = 250
μ
s, T
J
= 25
o
C
3.6
7
13
14
15
DUTY CYCLE < 0.5%
I
CE
= 14A
5
I
CE
= 3A
I
CE
= 7A
3.0
3.2
3.4
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