參數(shù)資料
型號(hào)： FGH30N6S2
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT
中文描述： 45 A, 600 V, N-CHANNEL IGBT, TO-247
封裝： TO-247, 3 PIN
文件頁(yè)數(shù)： 5/8頁(yè)
文件大小： 177K
代理商： FGH30N6S2
2003 Fairchild Semiconductor Corporation
FGH30N6S2 / FGP30N6S2 / FGS30N6S2 Rev. A1
F
Figure 13. Transfer Characteristic
Figure 14. Gate Charge
Figure 15. Total Switching Loss vs Case
Temperature
Figure 16. Total Switching Loss vs Gate
Resistance
Figure 17. Capacitance vs Collector to Emitter
Voltage
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
Typical Performance Curves
(Continued)
I
C
,
0
25
50
7
9
16
75
150
5
125
100
175
6
8
10
11
12
13
14
15
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= -55
o
C
T
J
= 125
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
J
= 25
o
C
V
G
,
Q
G
, GATE CHARGE (nC)
2
10
0
6
4
8
12
2
6
10
12
0
14
16
14
16
18
24
4
8
20
I
G(REF)
= 1mA, R
L
= 25
, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
22
I
CE
= 6A
0
0.6
50
75
100
T
C
, CASE TEMPERATURE (
o
C)
0.8
125
25
1.2
E
T
,
1.0
I
CE
= 24A
I
CE
= 12A
0.4
0.2
R
G
= 10
, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
150
0.1
10
100
R
G
, GATE RESISTANCE (
)
1.0
1000
E
T
,
10
1
E
TOTAL
= E
ON2
+ E
OFF
T
J
= 125
o
C, L = 500
μ
H, V
CE
= 390V, V
GE
= 15V
I
CE
= 24A
I
CE
= 12A
I
CE
= 6A
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
C
RES
0
10
20
30
40
50
0.0
0.4
1.2
1.4
0.8
C
OES
C
IES
60
70
80
90
100
0.2
0.6
1.0
FREQUENCY = 1MHz
1.5
2.0
2.5
3.0
3.5
6
7
8
9
10
11
12
13
14
15
16
V
GE
, GATE TO EMITTER VOLTAGE (V)
V
C
,
I
CE
= 12A
I
CE
= 6A
I
CE
= 24A
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%, V
CE
= 10V
相關(guān)PDF資料
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FGP30N6S2 600V, SMPS II Series N-Channel IGBT
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FGP40N6S2 Switch Mode Power Supply; Output Power:240W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:10A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:10A; Output Power Max:240W; Output Voltage:24VDC RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FGH30N6S2_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:600V, SMPS II Series N-Channel IGBT
FGH30N6S2D 功能描述:IGBT 晶體管 Comp 600V N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH30N6S2D 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT N TO-247
FGH30S130P 功能描述:IGBT 晶體管 1300V 30A FS SA Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGH30T65UPDT_F155 制造商:Fairchild Semiconductor Corporation 功能描述:IGBT 650V 30A TRENCH TO-247-3
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