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參數(shù)資料
| 型號： | FGC800A-130DS |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | HIGH POWER INVERTER USE PRESS PACK TYPE |
| 中文描述： | 大功率逆變器使用的新聞包裝型 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 55K |
| 代理商： | FGC800A-130DS |
Mar. 2001
6.8
150
100
50
1650
5.0
0.5
1.5
0.025
—
—
—
—
—
—
—
—
—
V
mA
mA
mA
μ
C
J/P
A
V
°
C/W
—
—
—
—
—
—
—
—
—
—
V
TM
I
RRM
I
DRM
I
GRM
Q
RR
E
rec
I
GT
V
GT
R
th(j-f)
E
on
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTORS
FGC800A-130DS
HIGH POWER INVERTER USE
PRESS PACK TYPE
Turn-off switching energy
t
gt
t
d
t
s
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Reverse recovery charge
Reverse recovery energy
Gate trigger current
Gate trigger voltage
Thermal resistance
Turn-on switching energy
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Limits
Typ
Min
Max
Unit
DC METHOD : V
D
= 24V, R
L
= 0.1
, T
j
= 25
°
C
d
v
/d
t
Critical rate of rise of off-state voltage
Turn-on time
Delay time
E
off
Storage time
3000
—
—
—
—
—
—
—
—
—
—
—
5.0
1.0
1.6
3.0
6.0
V/
μ
s
μ
s
μ
s
J/P
μ
s
J/P
I
T
= 800A, T
j
= 115
°
C
V
RM
= 6500V, T
j
= 115
°
C
V
DM
= 6500V, V
GK
=
–
2V, T
j
= 115
°
C
V
RG
= 21V, T
j
= 115
°
C
V
D
= 3000V, V
GK
=
–
2V, T
j
= 115
°
C
(Expo. wave)
I
T
= 800A, V
D
= 3000V, d
i
/d
t
= 1000A/
μ
s, T
j
= 115
°
C
C
S
= 0.1
μ
F, R
S
= 10
With GU-D08
I
T
= 800A, V
DM
= 3/4 V
DRM
, V
D
= 3000V
C
S
= 0.1
μ
F, R
S
= 10
, V
RG
= 20V, T
j
= 115
°
C
With GU-D08
V
R
= 3000V, I
T
= 800A, d
i
/d
t
= 1000A/
μ
s
C
S
= 0.1
μ
F, R
S
= 10
, T
j
= 115
°
C
(see Fig. 4)
(see Fig. 1, 2)
(see Fig. 1, 5)
(see Fig. 5, 6)
Junction to fin
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