參數資料
型號： FGB20N6S2DT
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
中文描述： 28 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁數： 6/9頁
文件大?。?/td> 232K
代理商： FGB20N6S2DT
2002 Fairchild Semiconductor Corporation
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A1
F
Figure 19. Diode Forward Current vs Forward
Voltage Drop
Figure 20. Recovery Times vs Forward Current
Figure 21. Recovery Times vs Rate of Change of
Current
Figure 22. Stored Charge vs Rate of Change of
Current
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
Typical Performance Curves
(Continued)
0.5
1.0
1.5
2.5
I
E
,
V
EC
, FORWARD VOLTAGE (V)
0
2.0
0
2
25
o
C
125
o
C
14
8
PULSE DURATION = 250
μ
s
DUTY CYCLE < 0.5%,
3.0
4
6
12
10
200
100
0
t
r
,
I
EC
, FORWARD CURRENT (A)
0
14
4
2
125
o
C t
a
125
o
C t
b
, t
rr
12
8
10
6
dI
EC
/dt = 200A/
μ
s, V
CE
= 390V
50
150
250
25
o
C t
b
, t
rr
25
o
t
a
25
o
C t
b
I
EC
= 7A, V
CE
= 390V
t
a
,
b
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
40
0
60
80
100
160
20
1000
200
300
600
400
500
125
o
C t
b
125
o
C t
a
25
o
C t
a
140
120
700
800
900
250
200
150
100
Q
r
,
dI
EC
/dt, RATE OF CHANGE OF CURRENT (A/
μ
s)
300
500
125
o
C, I
EC
= 7A
125
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 7A
V
CE
= 390V
350
1000
200
300
600
400
500
700
800
900
450
400
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3.0
5.0
4.5
6.0
5.5
I
EC
= 3.5A
S
4.0
3.5
1000
200
300
600
400
500
700
800
900
I
EC
= 7A
V
CE
= 390V, T
J
= 125
°
C
dI
EC
/dt, CURRENT RATE OF CHANGE (A/
μ
s)
3
5
4
10
6
I
EC
= 7A
I
EC
= 3.5A
I
7
V
CE
= 390V, T
J
= 125
°
C
9
8
1000
200
300
600
400
500
700
800
900
相關PDF資料
PDF描述
FGH20N6S2 Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:48VDC; Output Current 1:2.5A; Power Supply Mounting:Chassis; Output Current:2.5A; Output Power Max:120W; Output Voltage:48VDC; Series:JWS RoHS Compliant: Yes
FGP20N6S2 600V, SMPS II Series N-Channel IGBT
FGB20N6S2 600V, SMPS II Series N-Channel IGBT
FGH30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGP30N6S2D Switch Mode Power Supply; Output Power:198W; No. of Outputs:1; Output 1 VDC +:3VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:198W; Output Voltage:3VDC; Series:JWS RoHS Compliant: Yes
相關代理商/技術參數
參數描述
FGB20N6S2T 功能描述:IGBT 晶體管 600V N-Channel IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGB3040CS 功能描述:馬達/運動/點火控制器和驅動器 IGBT EcoSPARK 300mJ 400V NCh Cur Sen Ign RoHS:否 制造商:STMicroelectronics 產品:Stepper Motor Controllers / Drivers 類型:2 Phase Stepper Motor Driver 工作電源電壓:8 V to 45 V 電源電流:0.5 mA 工作溫度:- 25 C to + 125 C 安裝風格:SMD/SMT 封裝 / 箱體:HTSSOP-28 封裝:Tube
FGB3040CS_12 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:EcoSPARKTM 300mJ, 400V, N-Channel Current Sensing Ignition IGBT
FGB30N6S2 功能描述:IGBT 晶體管 Sgl 600V Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FGB30N6S2D 功能描述:IGBT 晶體管 Dl 600V Size 3 N-Ch RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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