參數(shù)資料
型號: FGA25N12ANTD
廠商: Fairchild Semiconductor Corporation
英文描述: 1200V NPT Trench IGBT
中文描述: 1200伏不擴散核武器條約溝道IGBT
文件頁數(shù): 4/9頁
文件大?。?/td> 861K
代理商: FGA25N12ANTD
4
www.fairchildsemi.com
FGA25N120ANTD Rev. A
F
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 4. Saturation Voltage vs. V
GE
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0
1
2
3
4
5
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25
°
C
T
C
= 125
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
180
10V
9V
8V
7V
20V
17V
15V 12V
V
GE
= 6V
T
C
= 25
°
C
C
C
Collector-Emitter Voltage, V
CE
[V]
25
50
75
100
125
1.5
2.0
2.5
3.0
Common Emitter
V
GE
= 15V
40A
I
C
= 25A
C
C
Case Temperature, T
C
[
°
C]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= -40
°
C
I
C
= 12.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 125
°
C
I
C
= 12.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 25
°
C
I
C
= 12.5A
C
C
Gate-Emitter Voltage, V
GE
[V]
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