參數(shù)資料
型號: FFM107
廠商: 樂山無線電股份有限公司
英文描述: 1A FAST RECOVERY SMA DIODES
中文描述: 形狀記憶合金第1A快恢復二極管
文件頁數(shù): 2/2頁
文件大?。?/td> 53K
代理商: FFM107
LESHAN RADIO COMPANY, LTD.
49A–2/2
FFM101 – FFM107
1A
RATING & CHARACTERISTIC CURVES OF 1A FAST RECOVERY SMA DIODES
FIG. 2 – TYPICAL FORWARD
CURRENT DERATING CURVE
AMBIENT TEMPER ATURE, (oC)
+0.5A
0
-0.25A
-1.0A
1cm
Trr
NOTES:1.Rise Time=7ns max.
Input Impedance=1megohm.22pF.
2.Rise Time=10ns max.
Source Impedance=50 ohms.
(+)
PULSE
GENERATOR
(NOTE 2)
(-)
D.U.T.
OSCILLOSCOPE
(NOTE 1)
1
NON.
INDUCTIVE
(2(-)
50
10
NONINDUCTIVE
NONINDUCTIVE
FIG.1–TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
SET TIME
A
BASE FOR 50/100ns/cm
25
50
75
100
125
150
175
1.25
1.00
0.75
0.50
0.25
0
Single Phase
8.3ms Single Half Sine-Wave
(JEDEC Method)
1
5
10
50
100
50
40
30
20
10
0
.4
.6
.8
1.0
1.2
1.4
1.6
100
10
1.0
0
T
J
=25oC
Pulse Width=300
μ
s
1% Duty Cycle
.1
.2
.4
1.0
2
4
10
20
40
100
200
100
60
40
20
10
6
4
2
1
T
J
=25oC
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
FIG. 4 – MAXINUM NON-REPETITIVE
FOWARD SURGE CURRENT
J
REVERSE VOLTAGE,(V)
P
NUMBER OF CYCLES AT 60Hz
FIG. 3 – TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD VOLTAGE,(V)
I
相關(guān)PDF資料
PDF描述
FFM101 1A FAST RECOVERY SMA DIODES
FFM102 1A FAST RECOVERY SMA DIODES
FFM103 1A FAST RECOVERY SMA DIODES
FFM104 1A FAST RECOVERY SMA DIODES
FFM105 1A FAST RECOVERY SMA DIODES
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FFM107FL 制造商:JINANJINGHENG 制造商全稱:Jinan Jingheng (Group) Co.,Ltd 功能描述:FAST Recovery Rectifiers
FFM107L 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FFM107-L 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Silicon Rectifier Fast recovery type
FFM107-M 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Fast recovery type
FFM107-MH 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Silicon Rectifier - Fast recovery type