參數(shù)資料
型號: FFM101-M
廠商: 美麗微半導(dǎo)體有限公司
英文描述: Fast recovery type
中文描述: 快速恢復(fù)類型
文件頁數(shù): 1/2頁
文件大?。?/td> 69K
代理商: FFM101-M
Chip Silicon Rectifier
FFM101-M THRU FFM107-M
Fast recovery type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECSOD123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.04 gram
(V)
(V)
(V)
(V)
(nS)
(
o
C)
FFM101-M
F1
50
35
50
FFM102-M
F2
100
70
100
FFM103-M
F3
200
140
200
FFM104-M
F4
400
280
400
FFM105-M
F5
600
420
600
250
FFM106-M
F6
800
560
800
FFM107-M
F7
1000
700
1000
-55 to +150
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
T
RR
*5
500
150
SYMBOLS
MARKING
CODE
1.3
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
Ambient temperature = 55
o
C
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
30
A
V
R
= V
RRM
T
A
= 25
o
C
5.0
uA
V
R
= V
RRM
T
A
= 100
o
C
100
uA
Thermal resistance
Junction to ambient
R
q
JA
42
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
15
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
*5 Reverse recovery time
Formosa MS
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.110(2.8)
0.094(2.4)
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
SOD-123
相關(guān)PDF資料
PDF描述
FFM102-M Fast recovery type
FFM103-M Fast recovery type
FFM104-M Fast recovery type
FFM105-M Fast recovery type
FFM106-M Fast recovery type
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